Partial transparency effects of silicon during Rapid Thermal Processing
Materials Research Society Symposium - Proceedings
The radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, flee carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.
Abramson, A., Tada, H., Nieva, P., Zavracky, P., Miaoulis, I., & Wong, P. Y. (1998). Partial transparency effects of silicon during Rapid Thermal Processing. Materials Research Society Symposium - Proceedings, 525, 15-20. https://doi.org/10.1557/proc-525-15