Partial transparency effects of silicon during Rapid Thermal Processing

Authors

A. R. Abramson, Tufts University
H. Tada, Tufts University
P. Nieva, Tufts University
P. Zavracky, Tufts University
Ioannis N. Miaoulis, Tufts University; Roger Williams UniveristyFollow
Peter Y. Wong, Tufts University; Roger Williams UniversityFollow

Document Type

Conference Proceeding

Publication Title

Materials Research Society Symposium - Proceedings

Publication Date

1-1-1998

Abstract

The radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, flee carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

Volume

525

First Page

15

Last Page

20

DOI

10.1557/proc-525-15

Recommended Citation

Abramson, A., Tada, H., Nieva, P., Zavracky, P., Miaoulis, I., & Wong, P. Y. (1998). Partial transparency effects of silicon during Rapid Thermal Processing. Materials Research Society Symposium - Proceedings, 525, 15-20. https://doi.org/10.1557/proc-525-15

ISSN

02729172