Thermal effects induced by isolated step perturbations within thin films during processing with a radiant heat source
American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD
This paper identifies thermal effects induced by variations in the optical properties due to discontinuities in the structure of multilayer thin film arrangements. A numerical model of graphite-strip zone-melting recrystallization of silicon-on-insulator wafers was developed to examine these effects. Isolated step perturbations imbedded within the film structure affect the amount of local heating due to the discontinuity of optical properties. Such disturbances can perturb the solid-liquid interface of the film during processing. This can trigger instabilities in the interface morphology and induce material defects.
Hess, C., Wong, P., & Miaoulos, I. (1992). Thermal effects induced by isolated step perturbations within thin films during processing with a radiant heat source. American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, 196, 221-223. Retrieved from https://docs.rwu.edu/seccm_fp/184