Numerical simulation of the radiation effects in graphite-strip zone-melting recrystallization of thin silicon films
Document Type
Conference Proceeding
Publication Title
American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD
Publication Date
12-1-1989
Abstract
A two-dimensional finite difference numerical simulation of the temperature distribution during graphite-strip zone-melting recrystallization of thin silicon films was developed. The model takes into account the non-linearities of radiative heating and cooling, phase change effects, and the varying reflectivity, emissivity and thermal conductivity of silicon upon melting. Radiation shape factors, temperature profiles and melt-zone widths for the critical radiation parameters (graphite strip height, width and distance from the strip to the wafer) were obtained and presented in graphical form. These results can be used for process enhancement and optimization in zone-melting.
Volume
123
First Page
211
Last Page
217
Recommended Citation
Lipman, J., Wong, P. Y., Miaoulis, I., & Im, J. (1989). Numerical simulation of the radiation effects in graphite-strip zone-melting recrystallization of thin silicon films. American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, 123, 211-217. Retrieved from https://docs.rwu.edu/seccm_fp/191
ISSN
02725673
