Effect of doping level during rapid thermal processing of multilayer structures

Authors

A. R. Abramson, Tufts University
P. Nieva, Northeastern University
H. Tada, Tufts University
P. Zavracky, Northeastern University
Ioannis N. Miaoulis, Tufts University; Roger Williams UniversityFollow
Peter Y. Wong, Tufts University; Roger Williams UniversityFollow

Document Type

Article

Publication Title

Journal of Materials Research

Publication Date

1-1-1999

Abstract

A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various doping densities. Partial transparency and thin film interference effects are considered. Doping levels from approx. 1015 to approx. 1018 cm-3 are examined. Numerical temperature predictions of the lightly doped wafer are compared with experimental measurements. Heating rates for the lightly doped wafer fluctuate due to partial transparency effects and reach a maximum of approx. 50°C/s. The heavily doped wafer sees a maximum heating rate of approx. 100°C/s. Because the wafers are opaque above 700°C regardless of their level of doping, all wafers reach steady state at approx. 845°C.

Volume

14

Issue

6

First Page

2402

Last Page

2410

DOI

10.1557/JMR.1999.0323

Recommended Citation

Abramson, A., Nieva, P., Tada, H., Zavracky, P., Miaoulis, I., & Wong, P. (1999). Effect of doping level during rapid thermal processing of multilayer structures. Journal of Materials Research, 14 (6), 2402-2410. https://doi.org/10.1557/JMR.1999.0323

ISSN

08842914