Effect of doping level during rapid thermal processing of multilayer structures
Journal of Materials Research
A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various doping densities. Partial transparency and thin film interference effects are considered. Doping levels from approx. 1015 to approx. 1018 cm-3 are examined. Numerical temperature predictions of the lightly doped wafer are compared with experimental measurements. Heating rates for the lightly doped wafer fluctuate due to partial transparency effects and reach a maximum of approx. 50°C/s. The heavily doped wafer sees a maximum heating rate of approx. 100°C/s. Because the wafers are opaque above 700°C regardless of their level of doping, all wafers reach steady state at approx. 845°C.
Abramson, A., Nieva, P., Tada, H., Zavracky, P., Miaoulis, I., & Wong, P. (1999). Effect of doping level during rapid thermal processing of multilayer structures. Journal of Materials Research, 14 (6), 2402-2410. https://doi.org/10.1557/JMR.1999.0323