Numerical modeling of radiative properties of patterned wafers with sub-micron features

Authors

Jeffrey B. Hoppert, Tufts University
Ioannis N. Miaoulis, Tufts University; Roger Williams UniversityFollow
Peter Y. Wong, Tufts University; Roger Williams UniversityFollow

Document Type

Conference Proceeding

Publication Title

Materials Research Society Symposium - Proceedings

Publication Date

1-1-1996

Abstract

Decreasing feature sizes in the microelectronics industry have led to numerous processing problems with thin film semiconductors. Non-uniform temperature distributions, due to microscale radiation effects on the radiative properties of the thin film structures, are responsible for water defects. These microscale radiation effects become significant as pattern spacing and film thicknesses reach the same order of magnitude as the wavelengths of the heat-source radiation. A numerical model has been developed in which normal emissivities for patterned wafers are calculated, using an effective index of refraction technique. In this study various patterns at temperatures critical to the thermal processing are examined.

Volume

429

First Page

51

Last Page

56

DOI

10.1557/proc-429-51

Recommended Citation

Hoppert, J., Miaoulis, I., & Wong, P. (1996). Numerical modeling of radiative properties of patterned wafers with sub-micron features. Materials Research Society Symposium - Proceedings, 429, 51-56. https://doi.org/10.1557/proc-429-51

ISSN

02729172