Thermal and deposition stress relaxation in low-melting-point substrates with high-melting-point films

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Conference Proceeding

Publication Title

American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD

Publication Date



Manufacturing of thin-film heterostructures in the microelectronics and optical coating industries involves several deposition and annealing processes. Defects are generated in the structure due to excessive thermal stress and deposition related phenomena. Thermal annealing is used both for electrical activation in semiconducting materials and to induce creep to relax the stresses within the structure. Most creep analyses focus on the relaxation in the thin film and disregard the relaxation in the substrate which typically has a high-melting-point. With low-melting-point substrates, creep may occur within the substrate. Also, in structures with relatively large film to substrate thickness ratios, the plastic flow in the substrate must be considered to account for the relief of elastic strain in both the film and substrate. The effect of post-deposition thermal annealing is examined for a high-melting-point thin film on a low-melting-point substrate. A numerical model of creep flow in the multilayer structure is developed to study different materials and film structures. Parametric studies of the annealing time and temperature is conducted for different film structures and materials.



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