Effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on various substrates
Document Type
Conference Proceeding
Publication Title
Materials Research Society Symposium - Proceedings
Publication Date
1-1-1994
Abstract
The effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on various substrates was studied. Silicon films were deposited on silicon, germanium and glass substrates at temperatures as low as 350-400 °C and their crystallization properties on the different substrate surfaces were analyzed using X-ray diffraction. The polycrystalline films were shown to be thermally stable, have randomly oriented crystals, and have good adhesion to the substrates. The study demonstrated the feasibility of depositing extremely hard polycrystalline silicon films on germanium and other substrates by means of physical vapor deposition at temperatures as low as 350 °C.
Volume
338
First Page
179
Last Page
184
DOI
10.1557/proc-338-179
Recommended Citation
Madras, C., Goldman, L., Wong, P. Y., & Miaoulis, I. (1994). Effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on various substrates. Materials Research Society Symposium - Proceedings, 338, 179-184. https://doi.org/10.1557/proc-338-179
ISSN
02729172
