Transient heating effects during rapid thermal processing of semiconductors

Document Type

Conference Proceeding

Publication Title

American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD

Publication Date

12-1-1995

Abstract

Rapid Thermal Processing (RTP) involves heating a single wafer at a high rate, to a high temperature, and for a short duration. During RTP there is limited dopant redistribution, improved temperature uniformity for large diameter wafers, and photon-enhanced effects. Two critical problems plaguing RTP are temperature measurements and transient temperature uniformity. The fundamental phenomena associated with both problems are the varying radiative properties of wafers. Electronic materials have radiative properties which are a strong function of temperature, wavelength, and dopant density. Thin films, patterns, and surface roughness are also important to consider as well as the spectral characteristics of the heat source. All these factors affect the radiative properties transiently and spatially during processing. A numerical model has been developed to investigate the effect of the transiently changing radiative properties on the thermal behavior during RTP.

Volume

317-2

First Page

475

Last Page

482

ISSN

02725673

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