Transient and spatial radiative properties of patterned wafers during rapid thermal processing

Document Type

Conference Proceeding

Publication Title

Materials Research Society Symposium - Proceedings

Publication Date

1-1-1995

Abstract

Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Volume

387

First Page

15

Last Page

20

DOI

10.1557/proc-387-15

ISSN

02729172

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