Processing uniformity issues during zone-melting recrystallization of large thin-film areas

Document Type

Conference Proceeding

Publication Title

American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD

Publication Date

12-1-1994

Abstract

Zone-melting recrystallization (ZMR) is a lateral epitaxy technique used to recrystallize polycrystalline thin films on substrate. ZMR processing has been applied successfully to silicon technology. Other potential electronic materials that may be used in thin-film microelectronic devices exhibit a wide range of melting points (30 °C - 1400 °C). The heat transfer and crystallization dynamics during ZMR processing are different for these materials. Slight variations in thermal gradients can lead to different crystalline qualities. Processing uniformity over the wafer is strongly affected by the sensitivity of both the melt width and the solid/liquid interface to thermal changes. Examples of sources of thermal changes while processing large thin-film areas include wafer-edge effects, power fluctuations, and film structures within the wafer. Numerical ZMR simulations for large thin-film areas were conducted to evaluate the processing sensitivity to these disturbances. Specific sections of the large thin-film areas show high sensitivity to thermal disturbances. These sections are identified and possible solutions described.

Volume

293

First Page

9

Last Page

16

ISSN

02725673

This document is currently not available here.

Share

 
COinS