Thermal-radiation absorption characteristics of patterned wafers during rapid thermal processing
Document Type
Conference Proceeding
Publication Title
Materials Research Society Symposium - Proceedings
Publication Date
1-1-1994
Abstract
Microscale radiation effects are responsible for the dependence of absorption and temperature distributions on the geometry of the layering structures and the spectral characteristics of the heat source. The effect of patterned wafers, which may contain several different structures and materials, on the wafer absorption characteristics are investigated for rapid thermal processing. A numerical model to determine the thermal radiative absorptivity of the wafer for different structures and materials is presented for different heating conditions. The resulting transient effects are determined numerically for different rapid thermal processes. The changes in radiative properties for rapid thermal annealing and chemical vapor deposition are investigated for patterned wafers.
Volume
342
First Page
395
Last Page
400
DOI
10.1557/proc-342-395
Recommended Citation
Wong, P., & Miaoulis, I. (1994). Thermal-radiation absorption characteristics of patterned wafers during rapid thermal processing. Materials Research Society Symposium - Proceedings, 342, 395-400. https://doi.org/10.1557/proc-342-395
ISSN
02729172
