Transient and spatial radiative properties of patterned wafers during rapid thermal processing
Document Type
Conference Proceeding
Publication Title
Materials Research Society Symposium - Proceedings
Publication Date
1-1-1995
Abstract
Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.
Volume
389
First Page
287
Last Page
292
DOI
10.1557/proc-389-287
Recommended Citation
Wong, P., Miaoulis, I., & Madras, C. (1995). Transient and spatial radiative properties of patterned wafers during rapid thermal processing. Materials Research Society Symposium - Proceedings, 389, 287-292. https://doi.org/10.1557/proc-389-287
ISSN
02729172
