Transient and spatial radiative properties of patterned wafers during rapid thermal processing
Materials Research Society Symposium - Proceedings
Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.
Wong, P., Miaoulis, I., & Madras, C. (1995). Transient and spatial radiative properties of patterned wafers during rapid thermal processing. Materials Research Society Symposium - Proceedings, 389, 287-292. https://doi.org/10.1557/proc-389-287